NXP Semiconductors

PMV65XP

20 V, single P-channel Trench MOSFET

PMV65XP

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Product data sheet

12 February 2013

3 / 14

Symbol

Parameter

Conditions

Min

Max

Unit

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

-

-1.6

A

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 1. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 2. Normalized continuous drain current as a

function of junction temperature