Philips Semiconductors

PSMN006-20K

TrenchMOS™ ultra low level FET

Product data

Rev. 01 — 30 May 2002

2 of 12

9397 750 09631

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

25

°C ≤ T

-

20

V

drain current (DC)

-

32

A

total power dissipation

-

8.3

W

junction temperature

-

150

°C

drain-source on-state resistance

4.2

5

m

Ω

4.8

5.7

m

Ω

5.7

8.2

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

25

-

20

V

drain current (DC)

-32

A

gate-source voltage

-

±10

V

peak drain current

-60

A

total power dissipation

-

8.3

W

storage temperature

-

150

°C

operating junction temperature

−55

+150

°C

Source-drain diode

source (diode forward) current (DC)

-

7.5

A

-

30

A