2004 Aug 10

2

Philips Semiconductors

Product specification

20 V NPN general purpose transistors

PSS9013 series

FEATURES

• High power dissipation: 710 mW

• Low collector capacitance

• Low collector-emitter saturation voltage

• High current capability.

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN general purpose transistor in a SOT54 (TO-92)

leaded plastic package. PNP complement:

PSS9012 series.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER

MARKING CODE

PSS9013G

S9013G

PSS9013H

S9013H

SYMBOL

PARAMETER

MAX.

UNIT

collector-emitter voltage

20

V

collector current (DC)

500

mA

peak collector current

1

A

PIN

DESCRIPTION

1

collector

2

base

3

emitter

3

2

MAM279

1

2

3

Fig.1

Simplified outline (SOT54; TO-92) and

symbol.

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

20

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

500

mA

peak collector current

−

1A

peak base current

−

100

mA

total power dissipation

−

710

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C