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RN1607 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN1607 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() RN1607~RN1609 2001-06-07 2 Electrical Characteristics (Ta = 25 °°°°C) (Q1, Q2 Common) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICBO ― VCB = 50V, IE = 0 ― ― 100 nA Collector cut-off current RN1607~1609 ICEO ― VCE = 50V, IB = 0 ― ― 500 nA RN1607 ― VEB = 6V, IC = 0 0.081 ― 0.15 RN1608 ― VEB = 7V, IC = 0 0.078 ― 0.145 Emitter cut-off current RN1609 IEBO ― VEB = 15V, IC = 0 0.167 ― 0.311 mA RN1607 ― 80 ― ― RN1608 ― 80 ― ― DC current gain RN1609 hFE ― VCE = 5V, IC = 10mA 70 ― ― ― Collector-emitter saturation voltage RN1607~1609 VCE (sat) ― IC = 5mA, IB = 0.25mA ― 0.1 0.3 V RN1607 ― 0.7 ― 1.8 RN1608 ― 1.0 ― 2.6 Input voltage (ON) RN1609 VI (ON) ― VCE = 0.2V, IC = 5mA 2.2 ― 5.8 V RN1607 ― 0.5 ― 1.0 RN1608 ― 0.6 ― 1.16 Input voltage (OFF) RN1609 VI (OFF) ― VCE = 5V, IC = 0.1mA 1.5 ― 2.6 V Translation frequency RN1607~1609 fT ― VCE = 10V, IC = 5mA ― 250 ― MHz Collector output capacitance RN1607~1609 Cob ― VCB = 10V, IE = 0, f = 1MHz ― 3 6 pF RN1607 ― 7 10 13 RN1608 ― 15.4 22 28.6 Input resistor RN1609 R1 ― ― 32.9 47 61.1 kΩ RN1607 ― 0.191 0.213 0.232 RN1608 ― 0.421 0.468 0.515 Resistor ratio RN1609 R1/R2 ― ― 1.92 2.14 2.35 ― |
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