RN1961~RN1966

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1961,RN1962,RN1963

RN1964,RN1965,RN1966

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in US6 (ultra super mini type 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

· Complementary to RN2961~RN2966

Equivalent Circuit and Bias Resistor Values

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1961~1966

50

V

RN1961~1964

10

Emitter-base voltage

RN1965, 1966

5

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN1961~1966

−55~150

°C

*: Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-2J1B

Weight: 6.8mg

Type No.

R1 (kΩ)R2 (kΩ)

RN1961

4.7

4.7

RN1962

10

10

RN1963

22

22

RN1964

47

47

RN1965

2.2

47

RN1966

4.7

47

Unit: mm