BAV99C datasheet(1/2 Pages) KEC

Part #	BAV99C

Description	SILICON EPITAXIAL PLANAR DIODE

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2015. 5. 12

1/2

SEMICONDUCTOR

TECHNICAL DATA

BAV99C

SILICON EPITAXIAL PLANAR DIODE

Revision No : 0

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

・Small Package : SOT-23(1).

MAXIMUM RATING (Ta=25

℃)

1. CATHODE 1

2. ANODE 2

3. ANODE 1 / CATHODE 2

2

1

3

DIM

MILLIMETERS

SOT-23(1)

A

B

C

D

E

2.90 0.1

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G1.90

J

K

L

M

N

0.10

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

Type Name

Marking

Lot No.

H8C

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Voltage

VR

IR=100uA

80

-

V

Forward Voltage

VF(1)

IF=1mA

-

0.61

0.65

V

VF(2)

IF=10mA

-

0.74

0.8

VF(3)

IF=150mA

-

1.25

Reverse Current

IR

VR=80V

-

0.5

μA

Total Capacitance

CT

VR=0, f=1MHz

-

4

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Reverse Voltage

VR

80

V

Continuous Forward Current

IF

100

mA

Surge Current (10ms)

IFSM

1

A

Power Dissipation

PD

225*

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

* Note1 : Package Mounted On FR-5 Board (25.4

×19.05×1.57mm)

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