SI7540DP datasheet(2/8 Pages) VISHAY

2 / 8 page

Si7540DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71911

S-22387—Rev.. C, 16-Dec-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

VDS = VGS, ID = 250 mA

N-Ch

0.6

1.5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

P-Ch

-0.6

-1.5

VDS = 0 V, VGS = "8 V

N-Ch

"100

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

P-Ch

"100

VDS = 9.6 V, VGS = 0 V

N-Ch

VDS = -9.6 V, VGS = 0 V

P-Ch

-1

Zero Gate Voltage Drain Current

IDSS

VDS = 9.6 V, VGS = 0 V, TJ = 55_C

N-Ch

VDS = -9.6 V, VGS = 0 V, TJ = 55_C

P-Ch

-5

VDS w 5 V, VGS = 4.5 V

N-Ch

On-State Drain Currenta

ID(on)

VDS p -5 V, VGS = -4.5 V

P-Ch

-20

VGS = 4.5 V, ID = 11.8 A

N-Ch

0.014

0.017

VGS = -4.5 V, ID = -8.9 A

P-Ch

0.026

0.032

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 9.8 A

N-Ch

0.020

0.025

VGS = -2.5 V, ID = -6.9 A

P-Ch

0.043

0.053

VDS = 5 V, ID = 11.8 A

N-Ch

Forward Transconductancea

gfs

VDS = -5 V, ID = -8.9 A

P-Ch

IS = 2.9 A, VGS = 0 V

N-Ch

0.77

1.2

Diode Forward Voltagea

VSD

IS = -2.9 A, VGS = 0 V

P-Ch

-0.8

-1.2

Dynamicb

N-Ch

11.5

Total Gate Charge

N-Channel

P-Ch

N-Channel

VDS = 6 V, VGS = 4.5 V, ID = 11.8 A

N-Ch

3.2

Gate-Source Charge

Qgs

P-Channel

P-Ch

4.1

VDS = -6 V, VGS = -4.5 V, ID = -8.9 A

N-Ch

2.5

Gate-Drain Charge

Qgd

P-Ch

1.9

N-Ch

1.7

Gate Resistance

P-Ch

3.5

N-Ch

Turn-On Delay Time

td(on)

P-Ch

N-Channel

N-Ch

Rise Time

VDD = 6 V, RL = 6 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

P-Ch

P-Channel

N-Ch

Turn-Off Delay Time

td(off)

P-Channel

VDD = -6 V, RL = 6 W

^ -1 A, V

= -4.5 V, R = 6

P-Ch

ID ^ -1 A, VGEN = -4.5 V, RG = 6 W

N-Ch

Fall Time

P-Ch

Source-Drain

IF = 2.9 A, di/dt = 100 A/ms

N-Ch

Source-Drain

Reverse Recovery Time

trr

IF = -2.9 A, di/dt = 100 A/ms

P-Ch

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

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