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BCW68G Datasheet(PDF) 2 Page - Micro Commercial Components

Part # BCW68G
Description  PNP Small Signal Transistor 330mW
PDF  3 Pages
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Manufacturer  MCC [Micro Commercial Components]
Direct Link  http://www.mccsemi.com
Logo MCC - Micro Commercial Components

BCW68G Datasheet(HTML) 2 Page - Micro Commercial Components

  BCW68G Datasheet HTML 1Page - Micro Commercial Components BCW68G Datasheet HTML 2Page - Micro Commercial Components BCW68G Datasheet HTML 3Page - Micro Commercial Components  
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain(1)
at VCE = 10V, IC = 100
µAhFE
50
–––
at VCE = 1V, IC = 10mA
hFE
120
–
–
–
at VCE = 1V, IC = 100mA
hFE
160
250
400
–
at VCE = 2V, IC = 500mA
hFE
60
–––
Collector-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA
VCEsat
–
–
0.3
V
at IC = 500mA, IB = 50mA
VCEsat
–
–
0.7
V
Base-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA
VBEsat
–
–
1.25
V
at IC = 500mA, IB = 50mA
VBEsat
––2
V
Collector-Emitter Breakdown Voltage
at IC = 10mA, IB = 0
V(BR)CEO
45
–
–
V
Collector-Base Breakdown Voltage
at IC = 10
µA, IB = 0
V(BR)CBO
60
–
–
V
Emitter-Base Breakdown Voltage
at IE = 10
µA, at IC = 0
V(BR)EBO
5––
V
Collector-Base Cut-off Current
at VCB = 45V, IE = 0
ICBO
–
–
20
nA
at VCB = 45V, IE = 0, TA = 150°C
ICBO
––
20
µA
Emitter-Base Cut-off Current
at VEB = 4V, IC = 0
IEBO
–
–
20
nA
Gain-Bandwidth Product
at VCE = 5V, IC = 50mA, f = 20MHZ
fT
–
200
–
MHz
Collector-Base Capacitance
at VCB = 10V, f = 1MHz
CCB
–6–
pF
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz
CEB
–60–
pF
Note: (1) Pulse test: t
≤ 300µs, D = 2%
MCC
BCW68G
Revision: B
2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
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