2004 Mar 22

5

Philips Semiconductors

Product specification

Quad 2-input NAND gate (open drain)

74LVC38A

Fig.5 Logic diagram (one gate).

handbook, halfpage

MNA699

Y

GND

A

B

RECOMMENDED OPERATING CONDITIONS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. For SO14 packages: above 70

°C derate linearly with 8 mW/K.

For (T)SSOP14 packages: above 60

°C derate linearly with 5.5 mW/K.

For DHVQFN14 packages: above 60

°C derate linearly with 4.5 mW/K.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

supply voltage

for maximum speed performance

2.7

3.6

V

for low-voltage applications

1.2

3.6

V

input voltage

0

5.5

V

output voltage

0

5.5

V

operating ambient temperature

−40

+125

°C

input rise and fall times

0

20

ns/V

0

10

ns/V

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

supply voltage

−0.5

+6.5

V

input diode current

−−50

mA

input voltage

note 1

−0.5

+6.5

V

output diode current

−−50

mA

output voltage

note 1

−0.5

+6.5

V

output sink current

−

50

mA

−±100

mA

storage temperature

−65

+150

°C

power dissipation

−

500

mW