2SA950-Y datasheet(1/2 Pages) MCC

Part #	2SA950-Y

Description	PNP Silicon Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	MCC [Micro Commercial Components]

Direct Link	http://www.mccsemi.com

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1 / 2 page

PNP Silicon

Transistors

Features

x

Complementary Pair With 2SC2120

x Epoxy meets UL 94 V-0 flammability rating

x

Moisure Sensitivity Level 1

x

Lead Free Finish/RoHS Compliant ("P" Suffix designates

VCEO

Collector-Emitter Voltage

-30

V

VCBO

Collector-Base Voltage

-35

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current

-800

mA

PC

Collector power dissipation

600

mW

TJ

Junction Temperature

150

OC

TSTG

Storage Temperature

-55 to +150

OC

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=-100

µAdc, I

E=0)

-35

---

Vdc

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=-10mAdc, IB=0)

-30

---

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=-100

µAdc, I

C=0)

-5.0

---

Vdc

IEBO

Emitter-Base Cutoff Current

(VEB=-5.0Vdc, IC=0)

---

-0.1

µAdc

ON CHARACTERISTICS

hFE(1)

DC Current Gain*

(IC=-100mAdc, VCE=-1.0Vdc)

100

---

320

---

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=-500mAdc, IB=-20mAdc)

---

0.7

Vdc

fT

Transition Frequency

(VCE=-5Vdc, IC=-10mAdc)

---

120

---

MHz

Cob

Collector Output Capacitance

(VCB=-10Vdc, IE=0, f=1.0MHz)

---

19

---

pF

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

MCC

Revision: A

2012/11/22

TO-92

AE

B

C

D

G

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.170

.190

4.33

4.83

B

.170

.190

4.30

4.83

C

.550

.590

13.97

14.97

D

.010

.020

0.36

0.56

E

.130

.160

3.30

3.96

G

.0

96

.104

2.44

2.64

TM

Micro Commercial Components

www.mccsemi.com

1 of 2

Maximum Ratings

Symbol

Rating

Unit

2SA950

-O

2SA950

-Y

RoHS Compliant. See ordering information)

* hFE rank / O: 100-200, Y:160-320,

ICBO

Collector-Base Cutoff Current

(VCB=-35Vdc,IE=0)

---

-0.1

µAdc

VBE

Base-Emitter Voltage

(IC=-10mAdc, VCE=-1.0Vdc)

-0.5

---

0.8

Vdc

x

1W Output Applications

hFE(2)

DC Current Gain

(IC=-700mAdc, VCE=-1.0Vdc)

35

BENT LEAD

STRAIGHT LEAD

BULK PACK

AMMO PACK

E

C

B

E

C

B

* For ammo packing detailed specification, click here to visit our website

of product packaging for details.

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