MMBTA93 datasheet(1/3 Pages) MCC

Part #	MMBTA93

Description	PNP Silicon High Voltage Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	MCC [Micro Commercial Components]

Direct Link	http://www.mccsemi.com

Logo

1 / 3 page

MMBTA93

PNP Silicon High

Voltage Transistor

SOT-23

Suggested Solder

Pad Layout

Features

•

Surface Mount SOT-23 Package

•

Capable of 300mWatts of Power Dissipation

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.110

.120

2.80

3.04

B

.083

.104

2.10

2.64

C

.047

.055

1.20

1.40

D

.035

.041

.89

1.03

E

.070

.081

1.78

2.05

F

.018

.024

.45

.60

G

.0005

.0039

.013

.100

H

.035

.044

.89

1.12

J

.003

.007

.085

.180

K

.015

.020

.37

.51

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=-1.0mAdc, IB=0)

-200

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=-100

µAdc, IE=0)

-200

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=-100

µAdc, IC=0)

-5

Vdc

IC

Collector Current-Continuous

-500

mAdc

ICBO

Collector Cutoff Current

(VCB=-200Vdc, IE=0)

-250

nAdc

IEBO

Emitter Cutoff Current

(VEB=-5Vdc, IC=0)

-100

nAdc

ON CHARACTERISTICS

hFE

DC Current Gain

(IC=-1.0mAdc, VCE=-10Vdc)

(IC=-10mAdc, VCE=-10Vdc)

(IC=-30mAdc, VCE=-10Vdc)

25

40

25

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=-20mAdc, IB=-2.0mAdc)

-0.5

Vdc

VBE(sat)

Base-Emitter Saturation Voltage

(IC=-20mAdc,IB=-2.0mAdc)

-0.9

Vdc

SMALL-SIGNAL CHARACTERISTICS

fT

Current Gain-Bandwidth Product

(IC=-10mAdc, VCE=-20Vdc, f=100MHz)

50

MHz

Ccb

Collector-Base Capacitance

(VCB=-20Vdc, IE=0, f=1.0MHz)

8.0

pF

THERMAL CHARACTERISTICS

K

A

B

C

D

E

F

G

H

.079

2.000

inches

mm

.031

.800

.035

.900

.037

.950

.037

.950

Revision: B

2013/01/01

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

MCC

TM

Micro Commercial Components

E

B

C

www.mccsemi.com

1 of 3

Characteristic

Symbol

Max

Unit

300

mW

Thermal Resistance, Junction to Ambient

RqJA

417

°C/mW

Junction and Storage Temperature

TJ, Tstg

–55 to +150

°C

Collector Power Dissipation

Pc

•

Marking: YW

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

•

Similar Part No. - MMBTA93

Manufacturer	Part #	Datasheet	Description
Zowie Technology Corpor...	MMBTA93	57Kb / 3P	HIGH VOLTAGE TRANSISTOR PNP SILICON
Samsung semiconductor	MMBTA93	30Kb / 1P	PNP (HIGH VOLTAGE TRANSISTOR)
KEC(Korea Electronics)	MMBTA93	230Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE TELEPHONE)
Diotec Semiconductor	MMBTA93	108Kb / 2P	Surface mount High Voltage Transistors
Guangdong Kexin Industr...	MMBTA93	43Kb / 2P	High Voltage Transistors

More results

Similar Description - MMBTA93

Manufacturer	Part #	Datasheet	Description
Zowie Technology Corpor...	MMBT5401	83Kb / 4P	HIGH VOLTAGE TRANSISTOR PNP SILICON
	MMBTA92	57Kb / 3P	HIGH VOLTAGE TRANSISTOR PNP SILICON
	MMBTA93	57Kb / 3P	HIGH VOLTAGE TRANSISTOR PNP SILICON
Micro Electronics	MPS-A92	107Kb / 1P	PNP SILICON HIGH VOLTAGE TRANSISTOR
Infineon Technologies A...	PZTA92	120Kb / 4P	PNP Silicon High Voltage Transistor Dec-12-2001
Seme LAB	BSS76	19Kb / 2P	HIGH VOLTAGE PNP SILICON TRANSISTOR
Micro Commercial Compon...	MMBTA92	239Kb / 3P	PNP Silicon High Voltage Transistor
Micro Commercial Compon...	MMBTA94	386Kb / 3P	PNP Silicon High Voltage Transistor
New Jersey Semi-Conduct...	MPS-U60	87Kb / 1P	PNP SILICON HIGH VOLTAGE TRANSISTOR
New Jersey Semi-Conduct...	BSS74	123Kb / 2P	HIGH VOLTAGE PNP SILICON TRANSISTOR

More results

MMBTA93 Datasheet(PDF) 1 Page - Micro Commercial Components

MMBTA93 Datasheet(HTML) 1 Page - Micro Commercial Components

Similar Part No. - MMBTA93

Similar Description - MMBTA93

Html Pages

1 2 3

Datasheet Download

Link URL