© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

OP165, OP166 Series

Issue C

07/2016

Page 3

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Storage and Operating Temperature Range

-40

Reverse Voltage

2.0 V

Continuous Forward Current

50 mA

Peak Forward Current (1 µs pulse width, 300 pps)

3.0 A

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]

260° C

Power Dissipation

100 mW

(1)

Electrical Specifications

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

Apertured Radiant Incidence

OP165A, OP166A

1.95

-

-

mW/cm

2

(2)

Radiant Power Output

OP165W, OP166W

0.50

-

-

mW

Forward Voltage

-

-

1.60

V

Reverse Current

-

-

100

µA

Wavelength at Peak Emission

-

935

-

nm

B

Spectral Bandwidth between Half Power

Points

-

50

-

nm

Spectral Shift with Temperature

OP165, OP166 (A, B, C, D)

OP165W, OP166W

-

-

-

±0.30

-

-

nm/°C

Emission Angle at Half Power Points

OP165, OP166 (A, B, C, D)

OP165W, OP166W

-

-

18

90

-

-

Degree

Output Rise Time

-

1000

-

ns

Output Fall Time

-

500

-

ns

Notes:

1.

Derate linearly 1.33 mW/°C above 25°C

2.

sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered

on the mechanical axis of the lens, and 0.590” (14.99 mm) from the

measured areas.