BSR33 datasheet(1/2 Pages) MCC

Part #	BSR33

Description	Silicon PNP epitaxial planer Transistors

PDF	2 Pages

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Manufacturer	MCC [Micro Commercial Components]

Direct Link	http://www.mccsemi.com

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1 / 2 page

BSR33

Silicon

PNP epitaxial planer

Transistors

Features

•

Low Voltage

•

High Current

•

Complement to BSR43

Maximum Ratings @ 25OC Unless Otherwise Specified

Symbol

Rating

Unit

VCEO

Collector-Emitter Voltage

-80

V

VCBO

Collector-Base Voltage

-90

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-1

A

PC

Collector Dissipation

500

mW

TJ

Operating Junction Temperature

150

TSTG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=-1mAdc, IB=0)

-80

---

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=-100

µAdc, I

E=0)

-90

---

Vdc

V(BR)EBO

Collector-Emitter Breakdown Voltage

(IE=-100

µAdc, I

C=0)

-5

---

Vdc

ICBO

Collector Cutoff Current

(VCB=-60Vdc, IE=0Vdc)

---

-100

nAdc

IEBO

Emitter Cutoff Current

(VEB=-5Vdc, IC=0Vdc)

---

-100

nAdc

hFE

DC Current Gain

(IC=-0.1mAdc, VCE=-5Vdc)*

30

---

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=-150mAdc, IB=-15mAdc) *

---

-0.25

Vdc

fT

Current Gain-Bandwidth Product

(VCE=-10Vdc, IC=0Adc, f=100MHz)

100

---

MHz

* Pulse measurement

Revision: A

2014/07/31

25

SOT-89

omponents

20736 Marilla

Street Chatsworth

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MCC

1.BASE

2.COLLECTOR

3.EMITTER

TM

Micro Commercial Components

www.mccsemi.com

1 of

2

B

A

E

D

G

H

F

K

J

C

1

2

3

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

•

Rthja

Thermal Resistance From Junction To Ambient

250

oC/W

(IC=-0.5Adc, VCE=-5Vdc)*

50

---

(IC=-100mAdc, VCE=-5Vdc)*

100

---

300

---

(IC=-500mAdc, IB=-50mAdc) *

---

-1.2

Vdc

VBE(sat)

Base-emitter saturation voltage

(IC=-150mAdc, IB=-15mAdc) *

---

-1

Vdc

(IC=-500mAdc, IB=-50mAdc) *

---

-0.5

Vdc

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