MP4304

2002-11-20

1

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)

MP4304

High Power Switching Applications.

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching.

· Small package by full molding (SIP 12 pin)

· High collector power dissipation (4 devices operation)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

80

V

Collector-emitter voltage

80

V

Emitter-base voltage

7

V

DC

3

Collector current

Pulse

5

A

Continuous base current

0.5

A

Collector power dissipation

(1 device operation)

2.2

W

Collector power dissipation

(4 devices operation)

4.4

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32C1B

Weight: 3.9 g (typ.)

5

12

1

6

2

3

4

8

7

910

11