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PMF280UN Datasheet(PDF) 1 Page - NXP Semiconductors |
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PMF280UN Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page ![]() PMF280UN N-channel µTrenchMOS™ ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information s Surface mounted package s Footprint 40% smaller than SOT23 s Low on-state resistance s Low threshold voltage. s Driver circuits s Switching in portable appliances. s VDS ≤ 20 V s ID ≤ 1.02 A s Ptot ≤ 0.56 W s RDSon ≤ 340 mΩ. Table 1: Pinning - SOT323 (SC-70), simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT323 (SC-70) 2 source (s) 3 drain (d) 3 12 MBC870 Top view s d g MBB076 |
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