TIP127L datasheet(1/3 Pages) MCC | PNP Plastic-Encapsulate Transistors

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TIP127L Datasheet(PDF) 1 Page - Micro Commercial Components

Part #	TIP127L

Description	PNP Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	MCC [Micro Commercial Components]

Direct Link	http://www.mccsemi.com

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TIP127L Datasheet(HTML) 1 Page - Micro Commercial Components

TIP127L Datasheet HTML 1Page - Micro Commercial Components

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background image

TIP127

L

Features

TO-220

omponents

20736 Marilla Street Chatsworth

!"#

$% !"#

www.mccsemi.com

Revision: B

2016/06/15

1 of

3

PNP

Plastic-Encapsulate

Transistors

Absolute Maximum Ratings @ Ta = 25

℃(unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-base voltage

-

100

V

VCEO

Collector-emitter voltage

-

100

V

VEBO

Emitter-base Voltage

-5

V

IC

Collector Current

-5

A

Collector Power Dissipation

2

W

PC

TJ

Junction Temperature

150

℃

TSTG

Storage Temperature Range

-

55 to +150

℃

Electrical Characteristics @ 25OC Unless Otherwise Specified

PIN 1.

BASE

PIN 2.

COLLECTOR

PIN 3.

EMITTER

G

R

B

Q

H

U

L

D

C

J

K

A

F

S

T

1

3

2

N

V

MIN

MAX

NOTE

A

.560

.625

14.22

15.88

B

.380

.420

9.65

10.67

C

.140

.190

3.56

4.82

D

.020

.045

0.51

1.14

F

.139

.161

3.53

4.09

∅

G

.190

.110

2.29

2.79

H

---

.250

---

6.35

J

.012

.025

0.30

0.64

K

.500

.580

12.70

14.73

L

.045

.060

1.14

1.52

N

.190

.210

4.83

5.33

Q

.100

.135

2.54

3.43

R

.080

.115

2.04

2.92

S

.045

.055

1.14

1.39

T

.230

.270

5.84

6.86

U

-----

.050

-----

1.27

V

.045

-----

1.15

-----

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

•

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

• Medium Power Complementary Silicon Transistors

Halogen free available upon request by adding suffix "-HF"

•

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

Thermal Resistance Junction to Ambient

62.5

o

C/W

RthJA

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-Base

Breakdown Voltage

V(BR)CBO

C

I =-1mA, IE=0

-100

V

Collector-Emitter

Breakdown Voltage

VCEO(SUS)

C

I =-30mA,IB=0

-100

V

Collector cut-off current

ICBO

CB

V =-100V,IE=0

-0.2

mA

Collector cut-off current

ICEO

CE

V =-50V,IE=0

-0.5

mA

Emitter cut-off current

IEBO

EB

V =-5V,IC=0

-2

mA

DC current gain

hFE（1）

VCE=-3V, IC=

-50mA 1000

hFE（2）

VCE=-3V, IC=-3A

1000

Collector-Emitter

Saturation Voltage

VCE(sat)

IC=-3A,IB=-12mA

-2

V

IC=-5A,IB=-20mA

-4

Base-Emitter Voltage

VBE

CE

V =-3V, IC=-3A

-2.5

V

Collector output

capacitance

Cob

VCB=-10V,IE=0, f=1MHz

300

pF

≈ 7.2 k

Micro Commercial Components

M C C

R

BASE

COLLECTOR

≈ 230

EMITTER

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