BSS84 datasheet(2/4 Pages) MCC

2 / 4 page

BSS84

Micro Commercial Components

MCC

Revision: A

2014/12/03

www.mccsemi.com

2 of 4

Electrical characteristics per line@25o

C( unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC CHARACTERISTICS

Drain-source breakdown voltage

V (BR)DSS

VGS = 0V, ID =-250µA

-50

VDS =-50V,VGS = 0V

-15

µA

Zero gate voltage drain current

IDSS

VDS =-25V,VGS = 0V

-0.1

µA

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

µA

Gate threshold voltage (note 3)

VGS(th)

VDS =VGS, ID =-250µA

-0.9

-2

VGS =-5V, ID =-0.1A

Ω

Drain-source on-resistance (note 3)

RDS(on)

VGS =-10V, ID =-0.1A

Ω

Forward transconductance (note 1)

gFS

VDS=-25V; ID=-100mA

DYNAMIC CHARACTERISTICS (note 4)

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

VDS =5V,VGS =0V,f =1MHz

SWITCHING CHARACTERISTICS (note 4)

Turn-on delay time

td(on)

2.5

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

VDD=-15V,

RL=50Ω, ID =-2.5A

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

-0.13

Pulsed Current

ISM

-0.52

Diode forward voltage (note 3)

VSD

IS=-0.13A, VGS = 0V

-2.2

Notes :

1. Repetitive rating : Pulse width limited by junction temperature.

2. Surface mounted on FR4 board , t≤10s.

3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.

4. Guaranteed by design, not subject to producting.

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