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SF5G49 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SF5G49 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() SF5G49,SF5J49,USF5G49,USF5J49 2002-02-05 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Repetitive peak off-state current and Repetitive peak reverse current IDRM IRRM VDRM = VRRM = Rated RGK = 330 W ¾ ¾ 20 mA Peak on-state voltage VTM ITM = 12 A ¾ ¾ 1.6 V Gate trigger voltage VGT ¾ ¾ 0.8 V Gate trigger current IGT VD = 6 V, RL = 100 W RGK = 330 W 3 ¾ 70 mA Gate non-trigger voltage VGD VD = Rated ´ 2/3, Tc = 125°C 0.2 ¾ ¾ V Critical rate of rise of off-state voltage dv/dt VDRM = Rated ´ 2/3, Tc = 75°C RGK = 330 W, Exponential rise ¾ 50 ¾ V/ ms Holding current IH RL = 100 W, RGK = 330 W ¾ 2.5 ¾ mA Thermal resistance (junction to case) Rth (j-c) DC ¾ ¾ 6.0 °C/W Marking ※ 2 ※ 1 F5G49 SF5G49, USF5G49 ※ 1 Mark F5J49 Type Name SF5J49, USF5J49 ※ 2 Lot Number Month (starting from alphabet A) Year (last decimal digit of the current year) Time t (s) Transient thermal impedance (junction to case) 0.1 0.001 1 10 0.01 0.1 1 10 |
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