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AH3762Q Datasheet(PDF) 3 Page - Diodes Incorporated |
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AH3762Q Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 15 page ![]() AH3762Q Document number: DS38071 Rev. 2 - 2 3 of 15 www.diodes.com July 2015 © Diodes Incorporated AH3762Q Q Absolute Maximum Ratings (Note 5 & 6) (@TA = +25°C, unless otherwise specified.) Symbol Characteristic Value Unit VDD Supply Voltage (Note 6) 32 V VDDR Reverse Supply Voltage (Note 6) -32 V VOUT_MAX Output Off Voltage (Note 6) 32 V IOUT Continuous Output Current 60 mA IOUT_R Reverse Output Current -50 mA B Magnetic Flux Density Unlimited PD Package Power Dissipation SIP-3 550 mW SC59 and SOT23 230 Ts Storage Temperature Range -65 to +165 °C TJ Maximum Junction Temperature +150 °C ESD HBM Electros Static Discharge Withstand - Human Body Model (HMB) 8 kV ESD MM Electros Static Discharge Withstand - Machine Model (MM) 800 V ESD CDM Electros Static Discharge Withstand - Charged Device Model (CDM) 2 kV Notes: 5. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. 6. The absolute maximum VDD of 32V is a transient stress rating and is not meant as a functional operating condition. It is not recommended to operate the device at the absolute maximum rated conditions for any period of time. Recommended Operating Conditions (@TA = -40°C to +150°C, unless otherwise specified.) Symbol Parameter Conditions Rating Unit VDD Supply Voltage Operating 3.0 to 28 V TA Operating Temperature Range Operating -40 to +150 °C Electrical Characteristics (Notes 7 & 8) (@TA = -40°C to +150°C, VDD = 3V to 28V, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VOUT_ON Output ON Voltage IOUT = 20mA, B > Bop - 0.2 0.4 V ILKG Output Leakage Current (when output is off) VOUT = 28V, B < Brp, Output off - <0.1 10 µA IDD Supply Current Output open, TA = +25C - 3 3.5 mA Output open, TA = -40 to +150C - - 4 mA IDD_R Reverse Supply Current VDD = -18V, TA = +25C - 0.6 - µA VDD = -18V, TA = -40 to +150C - 0.6 1,500 µA VDD = -28V, TA = +25C - 1.6 - µA VDD = -28V, TA = -40 to +150C - 1.6 2,500 µA tP_ON Device Power-On Time (start-up time) VDD >= 3V, B > Bop (Note 7) - 10 µs fc Chopping Frequency VDD >= 3V - 800 - kHz td Response Time Delay (time from magnetic threshold reached to the start of the output rise or fall) (Note 9) - 3.75 - µs tr Output Rising Time (external pull-up resistor RL and load capacitance dependent) RL = 1kΩ, CL = 20pF - 0.2 1 µs tf Output Falling Time (Internal switch resistance and load capacitance dependent) RL = 1kΩ, CL = 20pF - 0.1 1 µs IOCL Output Current Limit B > Bop, (Note 10 ) 30 - 55 mA VZ Zener Clamp Voltage IDD = 5mA 28 - - V Notes: 7. When power is initially turned on, VDD must be within its correct operating range (3.0V to 28V) to guarantee the output sampling. The output state is valid after the start-up time of 10us typical from the operating voltage reaching 3V. 8. Typical values are defined at TA = +25C, VDD = 12V. Maximum and minimum values over the operating temperature range is not tested in production but guaranteed by design, process control and characterization. 9. Guaranteed by design, process control and characterization. Not tested in production. 10. The device will limit the output current IOUT to current limit of IOCL. |
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