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BCR30 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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BCR30 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 5 page ![]() Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens BCR30GM •IT (RMS) ...................................................................... 30A •VDRM ..............................................................400V/600V •IFGT !, IRGT !, IRGT # ........................................... 50mA •Viso ........................................................................ 2200V • UL Recognized: File No. E80276 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mounting torque Weight Isolation voltage Conditions Commercial frequency, sine full wave 360 ° conduction, Tb=60 °C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Screw M4 Typical value Ta=25 °C, AC 1 minute, T2 · T1 · G terminal to base Unit A A A2s W W V A °C °C kg·cm N·cm g V Ratings 30 300 375 5 0.5 10 2 –40 ~ +125 –40 ~ +125 15 1.47 26 2200 V1. Gate open. Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class Unit V V MAXIMUM RATINGS 8 400 500 12 600 720 20.2 MAX 39.2 MAX 2- φ4.2 2 5.0 MIN 20.1 MAX 1 3 21.6 MAX 30.0±0.2 2 1 3 7.0 7.0 φ1.55(G) 8.25 6.35 φ2.0(T1,T2) 1.5 T1 TERMINAL INDICATION TRADEMARK 3- φ1.3 TYPE NAME Tb TEST POINT LOT No. VOLTAGE CLASS GATE TERMINAL INDICATION ∗ OUTLINE DRAWING Dimensions in mm BCR30GM (C TYPE) 1 2 3 T1 TERMINAL T2 TERMINAL GATE TERMINAL |
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Similar Description - BCR30 |
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