AC857BSQ datasheet(2/5 Pages) DIODES

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AC857BSQ

Document number: DS39495 Rev. 1 - 2

2 of 5

www.diodes.com

February 2017

AC857BSQ

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-45

Emitter-Base Voltage

VEBO

-5.0

Collector Current

-100

Peak Collector Current

ICM

-200

Peak Base Current

IBM

-200

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

200

Thermal Resistance, Junction to Ambient Air (Note 6)

RJA

625

C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic (Note 7)

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-50

—

IC = -100µA, IB = 0

Collector-Emitter Breakdown Voltage

BVCEO

-45

—

IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

-5

—

IE = -100µA, IC = 0

DC Current Gain

hFE

220

—

475

—

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage

VCE(SAT)

—

-100

-400

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

—

-700

—

IC = -10mA, IB = -0.5mA

Base-Emitter Voltage

VBE(ON)

-580

-665

-750

VCE = -5.0V, IC = -2.0mA

Collector-Cutoff Current

ICBO

—

-15

-4.0

µA

VCB = -30V

VCB = -30V, TA = +150°C

Emitter Cutoff Current

IEBO

—

-100

VEB = -5.0V, IC = 0

Gain Bandwidth Product

100

—

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—

VCB = -10V, f = 1.0MHz

Emitter-Base Capacitance

CEBO

—

VEB = -0.5V, f = 1.0MHz

Notes:

6. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device

is measured when operating in a steady-state condition.

7. Short duration pulse test used to minimize self-heating effect.

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