TPC8211

2003-02-18

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)

TPC8211

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

D C

(Note 1)

5.5

Drain current

Pulse

(Note 1)

22

A

Single-device

operation

(Note 3a)

1.5

Drain power

dissipation

(t = 10 s)

(Note 2a)

Single-device value

at dual operation

(Note 3b)

1.1

W

Single-device

operation

(Note 3a)

0.75

Drain power

dissipation

(t = 10 s)

(Note 2b)

Single-device value

at dual operation

(Note 3b)

0.45

W

Single pulse avalanche energy

(Note 4)

39.3

mJ

Avalanche current

5.5

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.1

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please

refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.08 g (typ.)

Circuit Configuration

8

7

6

5

1

2

3

4