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BAS16DW Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BAS16DW
Description  SMD Small Signal Diode Arrays
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAS16DW Datasheet(HTML) 1 Page - Diotec Semiconductor

  BAS16DW Datasheet HTML 1Page - Diotec Semiconductor BAS16DW Datasheet HTML 2Page - Diotec Semiconductor  
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BAS16DW, BAV70DW, MMBD4448SDW
BAS16DW, BAV70DW, MMBD4448SDW
SMD Small Signal Diode Arrays
SMD Kleinsignal-Dioden-Arrays
IFAV = 150 mA
VF1 < 0.715 V
Tjmax = 150°C
VRRM = 75 V
IFSM1 = 2 A
trr
< 4 ns
Version 2018-01-25
SOT-363
Dimensions - Maße [mm]
Typical Applications
Signal processing, High-speed
Switching, Rectifying
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung, Schnelles
Schalten, Gleichrichten
Standardausführung 1)
Features
Very high switching speed
Low junction capacitance, low IR
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Extrem schnelles Schalten
Niedriges Cj, niedriges IR
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
3000 / 7“
Gegurtet auf Rolle
Weight approx.
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
3
Single
Diodes
BAS16DW
1, 2, 3 = A 4, 5, 6 = C
Type
Code
KW
2 x 2
Common
Cathode
BAV70DW
1 = A1, 2 = A2, 3 = C3/C4
4 = A3, 5 = A4, 6 = C1/C2
Type
Code
A4
− x −
4 in
Bridge
Config.
MMBD4448SDW
1 = A1, 2 = C1, 3 = AC2
4 = A2, 5 = C2, 6 = AC1
Type
Code
KB
Maximum ratings 2)
Grenzwerte 2)
Power dissipation (per device) − Verlustleistung (pro Bauteil)
Ptot
200 mW 3)
Maximum average forward current – Dauergrenzstrom
IFAV
150 mA 3)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
300 mA 3)
Peak forward surge current
Stoßstrom in Fluss-Richtung
tp ≤ 1 s
tp ≤ 1 µs
IFSM
0.5 A
2 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
MMBD4448SDW, BAS16DW
BAV70DW
VRRM
75 V
100 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben
3
Mounted on 3 mm2 copper pads per terminal – Montage auf 3 mm2 Kupferbelag (Lötpads) je Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
2.4
2 x 0.65
5
6
4
0.9±0.1
2
±0.1
Type
Code
3
2
1
5
2
1
3
6
4
5
6
4
2
1
3
5
2
1
3
6
4


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