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BAS16DW Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BAS16DW Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() BAS16DW, BAV70DW, MMBD4448SDW BAS16DW, BAV70DW, MMBD4448SDW SMD Small Signal Diode Arrays SMD Kleinsignal-Dioden-Arrays IFAV = 150 mA VF1 < 0.715 V Tjmax = 150°C VRRM = 75 V IFSM1 = 2 A trr < 4 ns Version 2018-01-25 SOT-363 Dimensions - Maße [mm] Typical Applications Signal processing, High-speed Switching, Rectifying Commercial grade 1) Typische Anwendungen Signalverarbeitung, Schnelles Schalten, Gleichrichten Standardausführung 1) Features Very high switching speed Low junction capacitance, low IR Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Extrem schnelles Schalten Niedriges Cj, niedriges IR Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 3000 / 7“ Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 3 Single Diodes BAS16DW 1, 2, 3 = A 4, 5, 6 = C Type Code KW 2 x 2 Common Cathode BAV70DW 1 = A1, 2 = A2, 3 = C3/C4 4 = A3, 5 = A4, 6 = C1/C2 Type Code A4 − x − 4 in Bridge Config. MMBD4448SDW 1 = A1, 2 = C1, 3 = AC2 4 = A2, 5 = C2, 6 = AC1 Type Code KB Maximum ratings 2) Grenzwerte 2) Power dissipation (per device) − Verlustleistung (pro Bauteil) Ptot 200 mW 3) Maximum average forward current – Dauergrenzstrom IFAV 150 mA 3) Repetitive peak forward current – Periodischer Spitzenstrom IFRM 300 mA 3) Peak forward surge current Stoßstrom in Fluss-Richtung tp ≤ 1 s tp ≤ 1 µs IFSM 0.5 A 2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung MMBD4448SDW, BAS16DW BAV70DW VRRM 75 V 100 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben 3 Mounted on 3 mm2 copper pads per terminal – Montage auf 3 mm2 Kupferbelag (Lötpads) je Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 2.4 2 x 0.65 5 6 4 0.9±0.1 2 ±0.1 Type Code 3 2 1 5 2 1 3 6 4 5 6 4 2 1 3 5 2 1 3 6 4 |
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