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BC847S Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BC847S
Description  SMD General Purpose NPN Transistors
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC847S Datasheet(HTML) 1 Page - Diotec Semiconductor

  BC847S Datasheet HTML 1Page - Diotec Semiconductor BC847S Datasheet HTML 2Page - Diotec Semiconductor  
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BC846S, BC847S
BC846S, BC847S
SMD General Purpose NPN Transistors
SMD Universal-NPN-Transistoren
IC
= 100 mA
hFE = 200...450
Tjmax = 150°C
VCEO = 45 V, 65 V
Ptot = 250 mW
Version 2018-02-07
SOT-363
Dimensions - Maße [mm]
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Features
Two transistors in one package
General Purpose
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Zwei Transistoren in einem Gehäuse
Universell anwendbar
Konform zu RoHS, REACH,
Konfliktmineralien 1
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
3000 / 7“
Gegurtet auf Rolle
Weight approx.
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Dual
Transistors
T1
1 = E1 2 = B1 6 = C1
T2
3 = C2 4 = E2 5 = B2
Type Code
BC846S
1B
BC847S
1F
Maximum ratings 2)
Grenzwerte 2)
BC846S
BC847S
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
B open
VCEO
65 V
45 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
80 V
50 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
6 V
Power dissipation – Verlustleistung
Ptot
250 mW 3)
Collector current – Kollektorstrom
DC
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TS
Tj
-55...+150°C
-55...+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C and per transistor, unless otherwise specified – TA = 25°C und pro Transistor, wenn nicht anders angegeben
3
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
2.4
2 x 0.65
5
6
4
0.9±0.1
2±0.1
Type
Code
3
2
1
T2
T1
5
6
4
3
2
1


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