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MA2C196 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MA2C196 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() Switching Diodes 201 MA2C196 (MA196) Silicon epitaxial planar type For switching circuits I Features • Low forward dynamic resistance r f • Small terminal capacitance, C t I Absolute Maximum Ratings T a = 25 °C 1 : Cathode 2 : Anode JEDEC : DO-34 Unit : mm Parameter Symbol Rating Unit Forward voltage (DC) VR 50 V Repetitive peak reverse voltage VRRM 50 V Average forward current IF(AV) 100 mA Repetitive peak forward current IFRM 225 mA Non-repetitive peak forward IFSM 500 mA surge current* Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C Note) * : t = l s 1st Band 2nd Band φ 0.45 max. φ 1.75 max. COLORED BAND INDICATES CATHODE 2 1 Type No. MA2C196 Color 1st Band Green 2nd Band Green I Cathode Indication Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR1 VR = 15 V 5 nA IR2 VR = 50 V 10 nA IR3 VR = 50 V, Ta = 150°C 100 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA50 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 4 pF Forward dynamic resistance rf1 IF = 3 mA, f = 30 MHz 2.5 Ω rf2 IF = 3 mA, f = 30 MHz 3.6 Ω Reverse recovery time* trr IF = 10 mA, VR = 1 V 0.2 ms Irr = 0.1 · IR, RL = 100 Ω I Electrical Characteristics T a = 25 °C Note) 1. Rated input/output frequency: 2.5 kHz 2. * : trr measuring circuit Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω t p = 2 µs t r = 0.35 ns δ = 0.05 I F = 10 mA V R = 1 V R L = 100 Ω 10% Input Pulse Output Pulse I rr = 0.1 · IR t r t p t rr V R I F t t A Note) The part number in the parenthesis shows conventional part number. |
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