RN2901~RN2906

2001-06-05

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2901,RN2902,RN2903,RN2904,RN2905,RN2906

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in US6 (ultra super mini type with 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1901~RN1906

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2901~2906

−50

V

RN2901~2904

−10

Emitter-base voltage

RN2905, 2906

−5

V

Collector current

−100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN2901~2906

−55~150

°C

* : Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-2J1A

Weight: 6.8mg

Type No.

R1 (kΩ)R2 (kΩ)

RN2901

4.7

4.7

RN2902

10

10

RN2903

22

22

RN2904

47

47

RN2905

2.2

47

RN2906

4.7

47

Unit in mm