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FX2000F Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # FX2000F
Description  Fast Efficient Rectifier Diodes
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

FX2000F Datasheet(HTML) 1 Page - Diotec Semiconductor

  FX2000F Datasheet HTML 1Page - Diotec Semiconductor FX2000F Datasheet HTML 2Page - Diotec Semiconductor  
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FX2000A ... FX2000G
FX2000A ... FX2000G
Fast Efficient Rectifier Diodes
Schnelle Gleichrichterdioden für hohen Wirkungsgrad
IFAV = 20 A
VF1
< 0.82 V
Tjmax = 150°C
VRRM = 50...400 V
IFSM = 650/715 A
trr
< 200 ns
Version 2018-02-07
Ø 8 x 7.5
(~P600)
Dimensions - Maße [mm]
Typical Applications
Rectification of medium frequencies
Free-wheeling diodes, Polarity
Protection, Solar Bypass diodes
Commercial grade 1)
Typische Anwendungen
Gleichrichtung mittlerer Frequenzen
Freilaufdioden, Verpolschutz
Solar-Bypassdioden
Standardausführung 1)
Features
Low forward voltage drop
Low thermal resistance
High forward surge capability
Package smaller than
industry standard
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Niedrige Fluss-Spannung
Niedriger Wärmewiderstand
Hohe Stoßstromfestigkeit
Gehäuse kleiner als
Industriestandard
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1
)
Taped in ammo pack
500
Gegurtet in Ammo-Pack
Weight approx.
2.0 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
FX2000A
50
50
FX2000B
100
100
FX2000D
200
200
FX2000F
300
300
FX2000G
400
400
Average forward current – Dauergrenzstrom
TA = 50°C
IFAV
20 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
TA = 50°C
IFRM
130 A 3)
Peak forward surge current
Stoßstrom in Fluss-Richtung
Half sine-wave
Sinus-Halbwelle
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
650 A
715 A
Rating for fusing – Grenzlastintegral
t < 10 ms
i2t
2112 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
-50...+150°C
+200°C 4,5)
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at TA at 10mm distance from case – Gilt, wenn die Anschlüsse in 10mm vom Geh. auf TA gehalten werden
4
For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes”
Weitere Infos in der Diotec Applikationsschrift „Reliability of Bypass Diodes”
5
Meets the Requirements of IEC 61215 bypass diode thermal test
Erfüllt die Anforderungen des IEC 61215 Bypass-Diodentests
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
Ø 1.6±0.05
Ø 8
±0.1


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