ACS120-7SB/SFP/ST

6/11

Maximum power dissipation vs RMS on state current.

RMS on-state current vs ambient temperature, case temperature

Relative variation of thermal impedance junction to ambient vs pulse duration and package

Relative variation of gate trigger current vs junction temperature

Relative variation of holding, latching and gate current vs junction

Relative variation of dV/dt vs Tj

Surge peak on-state current vs number of cycles

Non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of I²t.

On-state characteristics (maximal values)

Thermal resistance junction to ambient vs copper surface under tab (DPAK)

Relative variation of critical (di/dt)c vs junction temperature

OTHER FIGURES

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

α=180°

P(W)

180°

α

α

I

(A)

T(RMS)

Fig. 1: Maximum power dissipation versus RMS

on-state current.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0

25

50

75

100

125

Tc(°C)

α=180°

TO-220AB/DPAK

TO-220FPAB

I

(A)

T(RMS)

Fig. 2-1:

RMS on-state current versus case

temperature.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0

25

50

75

100

125

α=180°

Printed circuit board FR4

Natural convection

S=0.5cm²

I

(A)

T(RMS)

T

(°C)

amb

Fig. 2-2: RMS on-state current versus ambient

temperature.

1.E-02

1.E-01

1.E+00

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Zth

(j-a)

Zth

(j-c)

DPAK

TO-220FPAB

DPAK

TO-220FPAB

t (s)

p

K=[Zth/Rth]

Fig. 3: Relative variation of thermal impedance

versus pulse duration.