BAS21VD datasheet(3/8 Pages) PHILIPS

Part #	BAS21VD

Description	High-voltage switching diode array

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

2003 Jul 02

Philips Semiconductors

Product speciﬁcation

High-voltage switching diode array

BAS21VD

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT457 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MAX.

TYP.

UNIT

Per diode

forward voltage

see Fig.3

IF = 100 mA

−

IF = 200 mA

−

1.25

reverse current

VR = 200 V; note 1; see Fig.5

100

VR = 200 V; Tj = 150 °C; note 1

−

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

0.6

trr

reverse recovery time

when switched from

IF =30mAtoIR = 30 mA;

RL = 100 Ω; measured at

IR = 3 mA; see Fig.8

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

208

K/W

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