Schottky Barrier Diodes (SBD)

1

Publication date: August 2001

SKH00029AED

MA2SD25

Silicon epitaxial planar type

For super high speed switching

I Features

• I

• SS-Mini type 2-pin package

I Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

15

V

Repetitive peak reverse-voltage

15

V

Peak forward current

300

mA

Average forward current

200

mA

Non-repetitive peak forward-

1A

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

Marking Symbol: 6L

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

= 6 V

50

µA

Forward voltage (DC)

= 200 mA

0.39

V

Terminal capacitance

20

pF

= I

R

= 100 mA

3

ns

= 10 mA, R

L

= 100 Ω

I Electrical Characteristics T

a

= 25°C ± 3°C

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

1 : Anode

2 : Cathode

EIAJ : SC-79

SSMini2-F1 Package

Unit: mm

0.80

+0.05

–0.03

0.60

+0.05

–0.03

0.12

+0.05

–0.02

0

+0

–0.05

1

2

5

°

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

2. Rated input/output frequency: 250 MHz