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MSK3020 Datasheet(PDF) 2 Page - M.S. Kennedy Corporation |
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MSK3020 Datasheet(HTML) 2 Page - M.S. Kennedy Corporation |
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2 / 6 page ![]() 1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. 2 Resistance as seen at package pins. 3 Resistance for die only; use for thermal calculations. 4TA = 25°C unless otherwise specified. NOTES: VDSS Drain to Source Voltage ........... 100V MAX VDGDR Drain to Gate Voltage (RGS = 1 MW )........................ 100V MAX VGS Gate to Source Voltage (Continuous) ........................... ±20V MAX ID Continuous Current .................... 10A MAX IDM Pulsed Current ........................... 25A MAX RTH-JC Thermal Resistance (Junction to Case) ......................... 4.0°C/W IM Sense Current - Continuous ...... 13 mA MAX IMM Sense Current Peak ................. 33 mA MAX 2 Rev. A 7/00 ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Single Pulse Avalanche Energy (Q1, Q4) ........................................................ 7.9 mJ (Q2, Q3) ......................................................... 69 mJ TJ Junction Temperature ............................+175°C MAX TST Storage Temperature ........................ -55°C to +150°C TC Case Operating Temperature Range .... -55°C to +125°C TLD Lead Temperature Range (10 Seconds) ........................................... 300°C MAX Parameter Test Conditions 4 Drain-Source Breakdown Voltage Drain-Mirror Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source on Resistance 2 Drain-Source on Resistance 3 Forward Transconductance 1 N-CHANNEL (Q2, Q3) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 Output Capacitance of Sensing Cells 1 Current Sensing Ratio 1 P-CHANNEL (Q1, Q4) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 BODY DIODE Forward on Voltage 1 Reverse Recovery Time 1 Reverse Recovery Charge 1 IS = 14A VGS = 0V (Q2, Q3) IS = -14A VGS = 0V (Q1, Q4) IS = 14A di/dt = 100A/µS (Q2, Q3) IS = -8.4A di/dt = 100A/µS (Q1, Q4) IS = 14A di/dt = 100A/µS (Q2, Q3) IS = -8.4A di/dt = 100A/µS (Q1, Q4) VGS = 0V VDS = -25V f = 1 MHz VDD = -50V ID = -8.4A RG = 9.1W RD = 6.2W ID = -8.4A VDS = -80V VGS = -10V VGS = 10V ID = 14A VGS = 0V VDS = 25V f = 1 MHz VDD = 50V ID = 14A RG = 12W RD = 3.5W ID = 14A VDS = 80V VGS = 10V VGS = 0 ID = 0.25 mA (All Transistors) VGS = 0 VDS = 100V, (Q2, Q3) VDS = 100V VGS = 0V, (Q2, Q3) VDS = -100V VGS = 0V, (Q1, Q4) VGS = ±20V VDS = 0V (All Transistors) VDS = VGS ID = 250 µA (Q2, Q3) VDS = VGS ID = 250 µA (Q1, Q4) VGS = 10V ID = 8.4A (Q2, Q3) VGS = -10V ID = -8.4A (Q1, Q4) VGS = 10V ID = 8.4A (Q2, Q3) VGS = -10V ID = -8.4A (Q1, Q4) VDS = 50V ID = 8.4A (Q2, Q3) VDS = -50V ID = -8.4A (Q1, Q4) 100 100 - - - 2.0 -2.0 - - - - 4.7 3.2 - - - - - - - - - - - 1390 - - - - - - - - - - - - - - - - 9.5 42 22 25 700 320 83 9 - - - 25 -25 ±100 4.0 -4.0 0.26 0.31 0.16 0.20 - - 26 5.5 11 - - - - - - - - 1540 - - - - - - - - - - - - - - - - 2.5 -1.6 150 47 0.85 650 - - 310 71 1.2 970 V V nS nS µC nC - - - 15 58 45 46 760 260 170 58 8.3 32 - - - - - - - nC nC nC nS nS nS nS pF pF pF V V µA µA nA V V W W W W S S nC nC nC nS nS nS nS pF pF pF pF r Units Typ. Max. Min. MSK 3020 |
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