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MSK3020 Datasheet(PDF) 2 Page - M.S. Kennedy Corporation

Part # MSK3020
Description  H-BRIDGE MOSFET POWER MODULE
PDF  6 Pages
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Manufacturer  MSK [M.S. Kennedy Corporation]
Direct Link  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

MSK3020 Datasheet(HTML) 2 Page - M.S. Kennedy Corporation

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1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance
but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4TA = 25°C unless otherwise specified.
NOTES:
VDSS
Drain to Source Voltage ........... 100V MAX
VDGDR Drain to Gate Voltage
(RGS = 1 MW )........................ 100V MAX
VGS
Gate to Source Voltage
(Continuous) ........................... ±20V MAX
ID
Continuous Current .................... 10A MAX
IDM
Pulsed Current ........................... 25A MAX
RTH-JC Thermal Resistance
(Junction to Case) ......................... 4.0°C/W
IM
Sense Current - Continuous ...... 13 mA
MAX
IMM
Sense Current Peak ................. 33 mA
MAX
2
Rev. A 7/00
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Single Pulse Avalanche Energy
(Q1, Q4) ........................................................ 7.9 mJ
(Q2, Q3) ......................................................... 69 mJ
TJ
Junction Temperature ............................+175°C MAX
TST Storage Temperature ........................ -55°C
to
+150°C
TC
Case Operating Temperature Range .... -55°C
to
+125°C
TLD Lead Temperature Range
(10 Seconds) ........................................... 300°C MAX
Parameter
Test Conditions 4
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance
2
Drain-Source on Resistance
3
Forward Transconductance
1
N-CHANNEL (Q2, Q3)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
IS = 14A VGS = 0V (Q2, Q3)
IS = -14A VGS = 0V (Q1, Q4)
IS = 14A di/dt = 100A/µS (Q2, Q3)
IS = -8.4A di/dt = 100A/µS (Q1, Q4)
IS = 14A di/dt = 100A/µS (Q2, Q3)
IS = -8.4A di/dt = 100A/µS (Q1, Q4)
VGS = 0V
VDS = -25V
f = 1 MHz
VDD = -50V
ID = -8.4A
RG = 9.1W
RD = 6.2W
ID = -8.4A
VDS = -80V
VGS = -10V
VGS = 10V ID = 14A
VGS = 0V
VDS = 25V
f = 1 MHz
VDD = 50V
ID = 14A
RG = 12W
RD = 3.5W
ID = 14A
VDS = 80V
VGS = 10V
VGS = 0
ID = 0.25 mA (All Transistors)
VGS = 0
VDS = 100V, (Q2, Q3)
VDS = 100V VGS = 0V, (Q2, Q3)
VDS = -100V
VGS = 0V, (Q1, Q4)
VGS = ±20V
VDS = 0V (All Transistors)
VDS = VGS
ID = 250 µA (Q2, Q3)
VDS = VGS
ID = 250 µA (Q1, Q4)
VGS = 10V
ID = 8.4A (Q2, Q3)
VGS = -10V
ID = -8.4A (Q1, Q4)
VGS = 10V
ID = 8.4A (Q2, Q3)
VGS = -10V
ID = -8.4A (Q1, Q4)
VDS = 50V
ID = 8.4A (Q2, Q3)
VDS = -50V
ID = -8.4A (Q1, Q4)
100
100
-
-
-
2.0
-2.0
-
-
-
-
4.7
3.2
-
-
-
-
-
-
-
-
-
-
-
1390
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.5
42
22
25
700
320
83
9
-
-
-
25
-25
±100
4.0
-4.0
0.26
0.31
0.16
0.20
-
-
26
5.5
11
-
-
-
-
-
-
-
-
1540
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
-1.6
150
47
0.85
650
-
-
310
71
1.2
970
V
V
nS
nS
µC
nC
-
-
-
15
58
45
46
760
260
170
58
8.3
32
-
-
-
-
-
-
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
µA
µA
nA
V
V
W
W
W
W
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
Units
Typ.
Max.
Min.
MSK 3020



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