OP593C datasheet(2/7 Pages) TTELEC

2 / 7 page

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

NPN Plastic Silicon

Phototransistor

OP593, OP598, OP793, OP798 Series

Issue A

08/2016

Page 2

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Storage and Opera ng Temperature Range

-40

o C to +100o C

Collector-Emi er Voltage

30 V

Emi er-Collector Voltage

5 V

Con nuous Collector Current

50 mA

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]

260° C

(1)

Power Dissipa on

250 mW

(2)

Electrical Speciﬁcations

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

IC(ON)

On-State Collector Current

OP593A

OP593B

OP593C

OP598A

OP598B

OP598C

OP793A

OP793B

OP793C

OP793D

OP798A

OP798B

OP798C

OP798D

3.0

2.0

1.0

7.5

5.0

2.5

2.45

1.65

0.90

4.90

3.30

1.90

7.50

4.55

3.05

7.50

15.00

9.20

6.10

15.00

VCE = 5 V. Light source is an unﬁltered

GaAlAs LED with a peak emission wave-

length of 890 nm and Ee(APT) of 1.7 mW/

2 average within a .250” diameter

aperture.

ICEO

Collector-Dark Current

100

VCE = 10 V, EE = 0

V(BR)CEO

Collector-Emi er Breakdown Voltage

IC = 100 µA

V(BR)ECO

Emi er-Collector Breakdown Voltage

IE = 100 µA

VCE(SAT)

Collector-Emi er Satura on Voltage

0.40

IC = 0.4 mA, EE = 1.7 mW/cm

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