OP830SL datasheet(4/8 Pages) TTELEC

4 / 8 page

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

NPN Phototransistor

OP800SL Series, OP800WSL Series

OP830SL Series, OP830WSL Series

Issue A

08/2016

Page 4

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Electrical Speciﬁcations

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

IC(ON)

(3)

On-State Collector Current

OP800SL

OP801SL

OP802SL

OP803SL

OP804SL

OP805SL

OP800WSL

OP801WSL

OP802WSL

0.5

2.0

4.0

7.0

0.3

0.5

2.5

VCE = 5 V, EE = 5 mW/cm

2(4 )(5)

OP830SL

OP830WSL

VCE = 5 V, EE = 0.5 mW/cm

2(5)

ICEO

Collector Dark Current

OP800 (SL, WSL)

OP830 (SL, WSL)

100

VCE = 10 V, EE = 0

V(BR)CEO

Collector-Emi er Breakdown Voltage

OP800 (SL, WSL)

OP830 (SL, WSL)

IC = 100 µA

V(BR)CBO

Collector-Base Breakdown Voltage

[applies to OP800SL only]

IC = 100 µA

V(BR)ECO

Emi er-Collector Breakdown Voltage

5.0

IE = 100 µA

V(BR)EBO

Emi er-Base Breakdown Voltage

[applies to OP800SL only]

5.0

IE = 100 µA

VCE(SAT)

(3)

Collector-Emi er Satura on Voltage

OP800WSL

OP800SL

OP830SL

OP830WSL

0.4

1.2

IC = 0.15 mA, EE = 0.5 mW/cm

2(4)

IC = 0.4 mA, EE = 5 mW/cm

2(5)

IC = 0.15 mA, EE = 0.5 mW/cm

2(5)

IC = 1.0 mA, EE = 0.5 mW/cm

2(5)

Rise Time

µs

Fall Time

µs

VCC = 5 V, IC = 0.80 mA,

RL = 100 Ω (See Test Circuit)

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