ST180C08C1 datasheet(7/7 Pages) IRF

7 / 7 page

ST180C..C Series

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Bulletin I25164 rev. C 02/00

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs Characteristics

Fig. 11 - Gate Characteristics

Instantaneous On-state Voltage (V)

Square Wave Pulse Duration (s)

Instantaneous Gate Current (A)

100

1000

10000

123456

T = 25˚C

T = 125˚C

ST180C..C Series

0.001

0.01

0.1

0.001

0.01

0.1

ST180C..C Series

Steady State Value

= 0.17 K/W

(Single Side Cooled)

= 0.08 K/W

(Double Side Cooled)

(DC Operation)

thJ-hs

0.1

100

0.001

0.01

0.1

100

VGD

IGD

(b)

(a)

(1) (2) (3)

a) Recommended load line for

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

Frequency Limited by PG(AV)

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

Device: ST180C..C Series

Rectangular gate pulse

(4)

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