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TPC6201 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPC6201 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() TPC6201 2002-01-17 3 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VDS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID RDS (ON) – ID 0 1 2 3 5 0 1 4 5 25°C Common source VDS = 10 V Pulse test 2 3 4 100°C Ta = -55°C 0 0.2 0.4 0.6 1.0 02 8 10 46 0.8 Common source Ta = 25°C Pulse test ID = 2.5 A 1.2 A 0.6 A Drain current ID (A) 4 23 4 5 Common source Ta = 25°C Pulse test 4.5 3 VGS = 2.5 V 3.5 0 4 6 8 10 2 01 5 6 8 10 0 0.1 0 0.2 0.3 0.4 0.5 1 2 3 4 5 Common source Ta = 25°C Pulse test VGS = 2.5 V 3 3.5 6 4.5 8 10 1 3 10 0.1 0.3 0.5 1 3 5 10 5 Common source VDS = 10 V Pulse test Ta = -55°C 25°C 100°C 3 10 100 0.3 1 30 10 100 1000 0.1 30 300 10 V VGS = 4.5 V Common source Ta = 25°C Pulse test |
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