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AM447 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part # AM447
Description  High Precision Instrumentation Amplifier
PDF  6 Pages
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High Precision Instrumentation Amplifier
AM447
analog microelectronics
April 2000
3/6
Parameter
Symbol
Conditions
RM
Min.
Typ.
Max.
Unit
Output Stage
Adjustable Gain
GADJ
1.2
1.65
4
Gain Drift
dGADJ /dT
5
ppm/°C
Common Mode Input Range
CMIR
0.05
VCC – 1
V
Common Mode Rejection Ratio
CMRR
DC
80
90
dB
Power Supply Rejection Ratio
PSRR
70
80
dB
Input Offset Voltage
VOS
RG = 0
± 0.6
± 2.8
mV
VOS vs. Temperature
dVOS /dTRG = 0
± 15
± 25
µV/°C
Input Bias Current
IB
yes
–5
–10
–30
nA
IB vs. Temperature
dIB /dT
yes
5
10
25
pA/°C
Output Voltage Range
VOUT,min
Sinking, IOUT = 2mA
100
200
mV
VOUT,max
Sourcing, IOUT = 2mA
VCC – 0.2
V
Output Resistance
ROUT
1
Capacitive Load Stability
CLOAD
047
nF
Slew Rate
SR
CLOAD= 5nF
yes
0.027
V/
µs
Sink Capability
ISink
VOUT = 2.5V, GADJ = 1
2
mA
Source Capability
ISource
VOUT = 2.5V, GADJ = 1
2
mA
ESD: This integrated circuit can be damaged by ESD. Analog Microelectronics recommends that all integrated circuits
be handled with appropriate precautions. Failure to observe proper handling and installation procedures can
cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could cause the
device not to meet its published specifications.
BOUNDARY CONDITIONS
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Offset Compensation Resistor (IA) 1
1)
ROC1
27
33
k
Offset Compensation Resistor (IA) 2
1)
ROC2
27
33
k
Gain Resistor 1
RG1
67.3
68.7
k
Gain Resistor 2
RG2
14
210
k
Offset Compensation Resistor (Bridge) 1
RO1
19
k
Offset Compensation Resistor (Bridge) 2
RO2
1
k
Set Resistor
2)
RSET
75.0
76.8
78.7
k
Sensor Bridge Resistor
3)
RBRIDGE
713
k
Differential Input Voltage
VIN
VCC = 5V
7
35
mV
Notes:
1) The offset adjustment is described in the Functional Description. An offset compensation over temperature
can only be achieved by choosing the resistors ROC1 and ROC2 with the same temperature coefficient and a very
close placement of them in the circuit.
2) A good matching of the resistor R
SET with the bridge resistors is forced.
3) The symmetry of the two resistor half bridges has to be better than 2%.



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