2000 Dec 04

2

Philips Semiconductors

Product specification

900 MHz high linear low noise amplifier

BGA2011

FEATURES

• Low current, low voltage

• High linearity

• High power gain

• Low noise

• Integrated temperature compensated biasing

• Control pin for adjustment bias current.

APPLICATIONS

• RF front end

• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.

DESCRIPTION

Silicon Monolitic Microwave Integrated Circuit (MMIC)

amplifier consisting of an NPN double polysilicon transistor

with integrated biasing for low voltage applications in a

6-pin SOT363 plastic SMD package.

PINNING

PIN

DESCRIPTION

1

RF in

4

RF out

5, 6

GND

handbook, halfpage

Top view

MBL251

BIAS

CIRCUIT

RF in

RF out

GND

VS

VC

13

2

4

5

6

Fig.1 Simplified outline (SOT363) and symbol.

Marking code:A5-

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

DC supply voltage

RF input AC coupled

3

4.5

V

DC supply current

15

−

mA

DC control current

0.11

−

mA

insertion power gain

in application circuit, see Fig.2;

f = 900 MHz

19

−

dB

NF

noise figure

1.7

−

dB

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

DC supply voltage

RF input AC coupled

−

4.5

V

voltage on control pin

−

V

supply current

forced by DC voltage on RF input

−

30

mA

control current

−

0.25

mA

total power dissipation

−

135

mW

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C