IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTJ4N150

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note:

1. Pulse test, t

 300s, duty cycle, d  2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

2.8

4.6

S

C

iss

1576

pF

C

oss

V

105

pF

C

rss

35

pF

t

d(on)

19

ns

t

r

23

ns

t

d(off)

42

ns

t

f

22

ns

Q

g(on)

44.5

nC

Q

gs

V

7.7

nC

Q

gd

12.7

nC

R

thJC

1.13

C/W

R

thCS

0.30

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

4

A

I

SM

Repetitive, Pulse Width Limited by T

JM

1.6

A

V

SD

I

1.3

V

t

rr

0.9

μs

I

RM

15.0

A

Q

RM

6.7

μC

Resistive Switching Times

V

R

I

V

ISO TO-247 (IXTJ) OUTLINE

PINS:

1 = Gate

2 = Drain

3 = Source

4 = Isolated