IXTH12N150 datasheet(1/4 Pages) IXYS

Part #	IXTH12N150

Description	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

DS100425C(6/15)

High Voltage

Power MOSFET

Features



International Standard Packages



Molding Epoxies Weet UL 94 V-0

Flammability Classification



Fast Intrinsic Diode



Low Package Inductance

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High Voltage Power Supplies



Capacitor Discharge



Pulse Circuits

IXTT12N150

IXTH12N150

V

DSS

= 1500V

I

D25

= 12A

R

DS(on) 

 2.2



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1500

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1500

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C12

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

40

A

I

A

T

C = 25°C

6

A

E

AS

T

C = 25°C

750

mJ

dv/dt

I

S

 I

DM, VDD  VDSS,TJ  150C

5

V/ns

P

D

T

C = 25C

890

W

T

J

- 55 ... +150

C

T

JM

150

C

T

stg

- 55 ... +150

C

T

L

1.6mm (0.062 in.) From Case for 10s

300

C

T

SOLD

Plastic Body for 10s

260

C

M

d

Mounting Torque

1.13 / 10

Nm/lb.in.

Weight

TO-268

4.0

g

TO-247

6.0

g

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

1500

V

GS(th)

V

DS = VGS, ID = 250A

2.5

4.5

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 125C

500

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

2.2



G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D (Tab)

D

TO-268 (IXTT)

S

G

D (Tab)

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