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DSS5220T Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DSS5220T
Description  20V PNP LOW SATURATION TRANSISTOR
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DSS5220T Datasheet(HTML) 2 Page - Diodes Incorporated

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DSS5220T
Document number: DS39392 Rev. 2 - 2
2 of 7
www.diodes.com
June 2017
© Diodes Incorporated
DSS5220T
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-7
V
Peak Pulse Collector Current
ICM
-3
A
Continuous Collector Current
IC
-2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
600
mW
(Note 6)
1.2
W
Thermal Resistance, Junction to Ambient Air
(Note 5)
RθJA
209
°C/W
(Note 6)
104
Thermal Resistance, Junction to Leads
(Note 7)
RθJL
75
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still
air conditions whilst operating in a steady-state.
6. Same as note 5, except mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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