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IXTP05N100P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTP05N100P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2010 IXYS CORPORATION, All Rights Reserved DS100272A(12/10) V DSS = 1000V I D25 = 0.5A R DS(on) ≤≤≤≤≤ 30Ω Ω Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1000 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 1000 V V GSS Continuous ± 20 V V GSM Transient ± 30 V I D25 T C = 25°C 0.5 A I DM T C = 25°C, Pulse Width Limited by TJM 1.25 A I A T C = 25°C 0.5 A E AS T C = 25°C50 mJ dv/dt I S ≤ I DM, VDD ≤ VDSS,TJ ≤ 150°C 10 V/ns P D T C = 25°C50 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L Maximum Lead Temperature for Soldering 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque 1.13/10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g IXTA05N100P IXTP05N100P Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 1000 V V GS(th) V DS = VGS, ID = 50μA 2.0 4.0 V I GSS V GS = ± 20V, VDS = 0V ± 50 nA I DSS V DS = VDSS, VGS = 0V 10 μA T J = 125°C 750 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 24 30 Ω PolarTM Power MOSFET Features International Standard Packages Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls G = Gate D = Drain S = Source Tab = Drain TO-263 AA (IXTA) G D S TO-220AB (IXTP) D (Tab) G S D (Tab) Preliminary Technical Information |
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