FZT857 datasheet(4/7 Pages) DIODES

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FZT857

Document Number DS33177 Rev. 9 - 2

4 of 7

www.diodes.com

March 2017

FZT857

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

350

475

—

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCER

350

475

—

IC = 1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

300

350

—

IC = 1mA

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA

Collector Cut-Off Current

ICBO

—



µA

VCB = 300V

VCB = 300V, TA = +100°C

Collector Cut-Off Current

ICER

—



µA

VCE = 300V, RB ≤ 1kΩ

VCE = 300V, TA = +100°C

Emitter Cut-Off Current

IEBO

—

VEB = 6V

DC Current Gain (Note 10)

hFE

100

200

—

IC = 10mA, VCE = 5V

100

200

300

IC = 500mA, VCE = 10V

—

IC = 2A, VCE = 10V

—

IC = 3A, VCE = 10V

Collector-Emitter Saturation Voltage (Note 10)

VCE(SAT)

—

100

IC = 500mA, IB = 50mA

—

155

IC = 1A, IB = 100mA

—

180

230

IC = 2A, IB = 200mA

—

300

345

IC = 3.5A, IB = 600mA

Base-Emitter Saturation Voltage (Note 10)

VBE(SAT)

—

1,020

1,250

IC = 3.5A, IB = 600mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(ON)

—

940

1,120

IC = 3.5A, VCE = 10V

Current Gain-Bandwidth Product (Note 10)

—

MHz

IC = 100mA, VCE = 10V,

f = 50MHz

Output Capacitance

COBO

—

VCB = 20V, f = 1MHz

Switching Times

tON

—

100

—

IC = 250mA, VCC = 50V,

IB1 = -IB2 = 25mA

tOFF

—

5,300

—

Note:

10. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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