FZT949 datasheet(4/7 Pages) DIODES

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FZT949

Datasheet Number: DS38008 Rev. 2 - 2

4 of 7

www.diodes.com

April 2017

FZT949

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ.

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-50

-80

—

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCER

-50

-80

—

IC = -1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

-30

-45

—

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8

—

IE = -100µA

Collector Cut-Off Current

ICBO

—

-50

-1

µA

VCB = -40V

VCB = -40V, TA = +100°C

Collector Cut-Off Current

ICER

—

-50

-1

µA

VCE = -40V, R ≤ 1kΩ

VCE = -40V, TA = +100°C

Emitter Cut-Off Current

IEBO

—

-10

VEB = -6V

DC Current Transfer Static Ratio (Note 10)

hFE

100

200

—

IC = -10mA, VCE = -1V

100

200

300

IC = -1A, VCE = -1V

140

—

IC = -5A, VCE = -1V

—

IC = -20A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 10)

VCE(SAT)

—

-50

-75

IC = -500mA, IB = -20mA

—

-85

-140

IC = -1A, IB = -20mA

—

-190

-270

IC = -2A, IB = -200mA

—

-350

-440

IC = -5.5A, IB = -500mA

Base-Emitter Saturation Voltage (Note 10)

VBE(SAT)

—

-1,100

-1,250

IC = -5.5A, IB = -500mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(ON)

—

-900

-1,060

IC = -5.5A, VCE = -1V

Transitional Frequency (Note 10)

—

100

—

MHz

IC = -100mA, VCE = -10V,

f = 50MHz

Output Capacitance

COBO

—

122

—

VCB = -10V, f = 1MHz

Switching Time

tON

—

120

—

VCC = -10V, IC = -4A,

IB1 = -IB2 = -400mA

tOFF

—

130

—

Note:

10. Measured under pulsed conditions. Pulse width

≤ 300μs. Duty cycle ≤ 2%.

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