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CLC417 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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CLC417 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 8 page ![]() 5 http://www.national.com Channel Matching Channel matching and crosstalk efficiency are largely dependent on board layout. The layout of National’s dual amplifier evaluation boards are optimized to produce maximum channel matching and isolation. Typical channel matching for the CLC417 is shown in Figure 3. Figure 3: Channel Matching The CLC417’s channel-to-channel isolation is better than 70dB for input frequencies of 4MHz. Input referred crosstalk vs. frequency is illustrated in Figure 4. Figure 4: Input Referred Crosstalk vs. Frequency Driving Cables and Capacitive Loads When driving cables, double termination is used to prevent reflections. For capacitive load applications, a small series resistor at the output of the CLC417 will improve stability. The Rs vs. Capacitive Load plot, in the Typical Performance section, gives the recommended series resistance value for optimum flatness at various capacitive loads. Power Dissipation The power dissipation of an amplifier can be described in two conditions: s Quiescent Power Dissipation - PQ (No Load Condition) s Total Power Dissipation - PT (with Load Condition) The following steps can be taken to determine the power consumption for each CLC417 amplifier: 1. Determine the quiescent power PQ = (VCC - VEE) • ICC 2. Determine the RMS power at the output stage PO = (VCC - Vload) (Iload), where Vload and Iload are the RMS voltage and current across the external load. 3. Determine the total RMS power PT = PQ + PO Add the total RMS powers for both channels to determine the power dissipated by the dual. The maximum power that the package can dissipate at a given temperature is illustrated in the Power Derating curves in the Typical Performance section. The power derating curve for any package can be derived by utiliz- ing the following equation: where: Tamb = Ambient temperature (°C) θ JA = Thermal resistance, from junction to ambient, for a given package (°C/W) Layout Considerations A proper printed circuit layout is essential for achieving high frequency performance. National provides evaluation boards for the CLC417 (CLC730038 - DIP, CLC730036 - SOIC) and suggests their use as a guide for high frequency layout and as an aid for device testing and characterization. Supply bypassing is required for best performance. The bypass capacitors provide a low impedance return current path at the supply pins. They also provide high frequency filtering on the power supply traces. Other layout factors play a major role in high frequency performance. The following are recommended as a basis for high frequency layout: 1. Include 6.8 µF tantalum and 0.1µF ceramic capacitors on both supplies. 2. Place the 6.8 µF capacitors within 0.75 inches of the power pins. 3. Place the 0.1 µF capacitors less than 0.1 inches from the power pins. 4. Remove the ground plane near the input and output pins to reduce parasitic capacitance. 5. Minimize all trace lengths to reduce series inductances. Additional information is included in the evaluation board literature. Special Evaluation Board Considerations To optimize off-isolation of the CLC417, cut the Rf trace on both the 730038 and 730036 evaluation boards. This cut minimizes capacitive feedthrough between the input and output. Figure 5 indicates the alterations recommended to improve off-isolation. Frequency (MHz) 1 10 100 Av = +2 RL = 100Ω Vo = 2Vpp -450 -360 -270 -180 -90 0 Channel A Channel A Channel B Channel B Frequency (MHz) -120 -100 -80 -60 -40 -20 1 100 10 P (175 Tamb) JA = °− θ |
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