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IRLSG5653 Datasheet(PDF) 3 Page - International Rectifier |
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IRLSG5653 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 7 page ![]() www.irf.com Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified) MIN TYP MAX Vin(ON) Operation start voltage 14.4 16 17.6 V Vin=0→17.6V Vin(OFF) Operation stop voltage 9 10 11 V Vin=17.6→9V Iin(ON) Circuit current in operation - - 20 mA - Iin(OFF) Circuit current in non-operation - - 100 µA Vin=14V TOFF(MAX) Maximum OFF time 45 - 55 µsec - Tth(2) Minimum time for input of quasi resonant signals *6 - - 1 µsec - TOFF(MIN) Minimum OFF time *7 - - 2 µsec - Vth(1) O.C.P/F.B Pin threshold voltage 1 0.68 0.73 0.78 V - Vth(2) O.C.P/F.B Pin threshold voltage 2 1.3 1.45 1.6 V IOCP/FB O.C.P/F.B Pin extraction current 1.2 1.35 1.5 mA - Vin(OVP) O.V.P operation voltage 34 36.5 39 V Vin=0→39.0V Iin(H) Vin(La.OFF) Latch circuit release voltage *8 6.6 - 8.4 V Vin=39.0→6.6V Tj(TSD) Thermal shutdown operating temperature 140 - - ℃ - Vin(SENSE) Detected Voltage 31.7 32 32.3 V Vin=31.7→32.3V - Temperature coefficient of detected voltage - 2.5 - mV/℃ Vin=31.7→32.3V µA Latch circuit sustaining current *8 Definition Symbol Vin=39.0→8.5V Ratings Units Test Conditions - - 400 Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified MIN TYP MAX ID=300µA V3-2=0V(short) VDS =650V V3-2=0V(short) V3-2=10V ID=1.2A tf Switching time - - 250 nsec - Between channel and internal frame 300 -2 ℃/W - θch-F - - Thermal resistance Symbol µA On-resistance RDS(ON) -- 1.9 Ω Drain leakage current IDSS VDSS 650 - - Ratings Units Test Conditions Drain-to-Source breakdown voltage V Definition IRIS-G5653A *6 Recommended operating conditions Time for iunput of quasi resonant signals For the quasi resonant signal inputted to OCP/FB Pin at the time of quasi resonant operation, the signal shall be wider thant Tth(2). *7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Vth(2) VO.C.P/F.B Tth(2)≧1.0μsec 0V |
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