2 - 4

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Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

R

DS(on)

V

42N20

0.060

W

50N20

0.045

W

58N20

0.040

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

g

fs

V

20

32

S

C

iss

4400

pF

C

oss

V

800

pF

C

rss

285

pF

t

d(on)

18

25

ns

t

r

V

15

20

ns

t

d(off)

R

G

= 1

W (External)

72

90

ns

t

f

16

25

ns

Q

g(on)

190

220

nC

Q

gs

V

35

50

nC

Q

gd

95

110

nC

R

thJC

0.42

K/W

R

thCK

(TO-247 and TO-204 Case styles)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min. Typ.

Max.

I

S

V

42N20

42

A

50N20

50

A

58N20

58

A

I

SM

Repetitive;

42N20

168

A

pulse width limited by T

JM

50N20

200

A

58N20

232

A

V

SD

I

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

t

rr

T

25

°C

200

ns

T

300

ns

Q

RM

T

25

°C

1.5

mC

T

2.6

mC

I

RM

T

25

°C19

A

T

A

I

-di/dt = 100 A/

ms,

V

TO-247 AD (IXFH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

TO-204 AE (IXFM) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

38.61 39.12

1.520 1.540

B

- 22.22

- 0.875

C

6.40 11.40

0.252 0.449

D

1.45

1.60

0.057 0.063

E

1.52

3.43

0.060 0.135

F

30.15

BSC

1.187

BSC

G

10.67 11.17

0.420 0.440

H

5.21

5.71

0.205 0.225

J

16.64 17.14

0.655 0.675

K

11.18 12.19

0.440 0.480

Q

3.84

4.19

0.151 0.165

R

25.16 26.66

0.991 1.050

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min. Recommended Footprint

IXFH/IXFM42N20

IXFH/IXFM58N20 IXFT50N20

IXFH/IXFM50N20

IXFT58N20

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025