IXTQ470P2 datasheet(1/2 Pages) IXYS

Part #	IXTQ470P2

Description	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

DS100248(03/10)

V

DSS

= 500V

I

D25

= 42A

R

DS(on)

≤≤≤≤≤ 145mΩ

Ω

t

rr(typ)

= 400ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C42

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

126

A

I

A

T

C = 25°C42

A

E

AS

T

C = 25°C

1.3

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

830

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

5.5

g

IXTQ470P2

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

500

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

4.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 100 nA

I

DSS

V

DS = VDSS, VGS= 0V

5

μA

T

J = 125°C

50

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

145 m

Ω

PolarP2TM

Power MOSFET

Features

Avalanche Rated

Fast Intrinsic Diode

Dynamic dv/dt Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Advance Technical Information

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-3P

G

D

S

Tab

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