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IPD80R360P7 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPD80R360P7
Description  800V CoolMOS짧 P7 Power Transistor
PDF  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD80R360P7 Datasheet(HTML) 1 Page - Infineon Technologies AG

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1
IPD80R360P7
Rev.2.1,2018-02-09
Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
0.36
Ω
Qg,typ
30
nC
ID
13
A
Eoss @ 500V
3.2
µJ
VGS(th),typ
3
V
ESD class (HBM)
2
-
Type/OrderingCode
Package
Marking
RelatedLinks
IPD80R360P7
PG-TO 252-3
80R360P7
see Appendix A


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