MJD32C datasheet(4/7 Pages) DIODES

4 / 7 page

MJD32C

Document number: DS31624 Rev. 8 - 2

4 of 7

www.diodes.com

January 2018

MJD32C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

-100



IC = -30mA, IB = 0

Collector Cut-off Current

ICEO



-1

μA

VCB = -60V, IB = 0

Collector Cut-off Current

ICES



-1

μA

VCE = -100V, VEB = 0

Emitter Cut-off Current

IEBO



-1

μA

VEB = -5V, IC = 0

Collector-Emitter Saturation Voltage (Note 10)

VCE(sat)





-1.2

IC = -3.0A, IB = -375mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(on)





-1.8



IC = -3A, VCE = -4V

DC Current Gain (Note 10)

hFE



VCE = -4V, IC = -1A

VCE = -4V, IC = -3A

Current Signal Current Gain

Hfe



VCE = -10V, IC = -0.5A, f = 1KHz

Current Gain-Bandwidth Product

3.0



MHz

IC = -500mA, VCE = -10V, f = 1MHz

Note:

10. Measured under pulsed conditions. Pulse width

 300μs. Duty cycle 2%.

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