2N7370 datasheet(1/2 Pages) MICROSEMI

Part #	2N7370

Description	NPN DARLINGTON HIGH POWER SILICON TRANSISTOR

PDF	2 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA

NPN DARLINGTON HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/624

Devices

Qualified Level

2N7370

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Value

Units

Collector-Emitter Voltage

VCEO

100

Vdc

Collector-Base Voltage

VCBO

100

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Base Current

IB

0.2

Adc

Collector Current

IC

12

Adc

Total Power Dissipation @ TC = +25

0C (1)

PT

100

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +175

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

1.5

0C/W

1)

Derate linearly 0.667 W/

0C above TC > +250C

TO-254*

*See Appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 100 mAdc

VCEO(sus)

100

Vdc

Collector-Emitter Cutoff Current

VCE = 50 Vdc

ICEO

1.0

mAdc

Collector-Emitter Cutoff Current

VCE = 100 Vdc, VBE = 1.5 Vdc

ICEX

0.5

mAdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

IEBO

2.0

mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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